Abstract-We review recent work done by the photonics packaging platform ePIXpack that serves the academic community with packaging & assembly developments in the area of integrated photonics. The paper includes recent examples of our packaging and assembly work, covering a broad range of technologies from silicon photonics to InP based devices. Index Terms-Hybrid integrated circuit packaging, Photonic integration, Silicon-on-insulator (SOI) I. INTRODUCTIONThe need for next generation carrier networks with capacities of 100Gbit/s transmission rate and beyond is driven by ubiquitous internet access, video driven IP traffic, highdefinition TV broadcast etc. [1,2]. Networks will need to handle constantly increasing bandwidth, while the underlying fiber infrastructure naturally only undergoes slow changes. This requires advanced solutions for high transmission capacity, which eventually can only be provided by integrated photonics devices. One option is silicon photonics. Siliconon-Insulator (SOI) is becoming an attractive passive optical integration platform due to its flexibility in terms of optical design. Thin SOI (~200nm) yields high-index contrast nanowaveguides [3] However, there still remain many challenges for silicon photonics to become an accepted technology in optical communications, e.g. integration of the source, efficient modulation, and polarization dependence.

Forced and free oscillations of magnetic domain walls and Bloch lines are excited in Nio.83Feo.i7 films a t 0.1 to 31 MHz by high frequency magnetic fields and visualized b y stroboscopic electron microscopy (time resolution 1 ns). Resonance of single and coupled oscillators, 'subharmonics', and Bloch line+ross-tie annihilation are directly observed. Specific mass and relaxation time are determined, being m = 2.6 X kg/m, TBL M 15 ns for a Bloch line. Erzwungene und freie Schwingungen von magnetischen Bereichswanden und Blochlinien werden in Nio,saFeo,17 Schichten im Bereich 0,l bis 31 MHz durch hochfrequente Magnetfelder angeregt und durch stroboskopische Elektronenmilrtoskopie abgebildet (zeitliche Auflosung 1 ns). Resonanzen von Einzel-und gekoppelten Schwingern, sowie Blochlinien-Stachel-Vernichtung werden direkt beobachtet. Spezifische Masse und Relaxationszeit werden bestimmt. Sie betragen m = = 2,6 X lo-' kg/m2, z = 30 ns fur eine 9O0-NBel-Wand sowie m B L z kg/m, -CBL M 15 11s fur eine Blochlinie. kg/m2, T = 30 ns for a 90O-NBel wall and mBL z

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