T. Shiota scite author profile

We studied Nb junctions with aluminum nitride, AlNx, tunnel barriers formed by plasma nitridation on aluminum film surfaces. The AlNx barrier junctions show current-voltage characteristics with leakage currents small enough and critical current densities large enough for use in Josephson digital circuits. The AlNx barrier junction exhibited improved annealing stability as compared to AlOx barrier junctions. For the AlNx barrier junction, decreases in critical current during annealing at 250 °C are remarkably suppressed.

show abstract

A Sub-$\mu$s Wake-Up Time Power Gating Technique With Bypass Power Line for Rush Current Support

Kawasaki

Shiota

Nakayama

et al. 2009

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

T. Shiota

Fabrication of high quality Nb/AlO/sub x/-Al/Nb Josephson junctions. I. Sputtered Nb films for junction electrodes

Fabrication of high quality Nb/AlO/sub /x-Al/Nb Josephson junctions. III. Annealing stability of AlO/sub /x tunneling barriers

A Sub-μs wake-up time power gating technique with bypass power line for rush current support

Nb Josephson junction with an AlNx barrier made by plasma nitridation

A Sub-$\mu$s Wake-Up Time Power Gating Technique With Bypass Power Line for Rush Current Support

Contact Info

Product

Resources

About

T. Shiota

Fabrication of high quality Nb/AlO/sub x/-Al/Nb Josephson junctions. I. Sputtered Nb films for junction electrodes

Fabrication of high quality Nb/AlO/sub /x-Al/Nb Josephson junctions. III. Annealing stability of AlO/sub /x tunneling barriers

A Sub-&#x03BC;s wake-up time power gating technique with bypass power line for rush current support

Nb Josephson junction with an AlNx barrier made by plasma nitridation

A Sub-$\mu$s Wake-Up Time Power Gating Technique With Bypass Power Line for Rush Current Support

Contact Info

Product

Resources

About

A Sub-μs wake-up time power gating technique with bypass power line for rush current support