In quantum dot superlattices, wherein quantum dots are periodically arranged, electronic states between adjacent quantum dots are coupled by quantum resonance, which arises from the short-range electronic coupling of wave functions, and thus the formation of minibands is expected. Quantum dot superlattices have the potential to be key materials for new optoelectronic devices, such as highly efficient solar cells and photodetectors. Herein, we report the fabrication of CdTe quantum dot superlattices via the layer-by-layer assembly of positively charged polyelectrolytes and negatively charged CdTe quantum dots. We can thus control the dimension of the quantum resonance by independently changing the distances between quantum dots in the stacking (out-of-plane) and in-plane directions. Furthermore, we experimentally verify the miniband formation by measuring the excitation energy dependence of the photoluminescence spectra and detection energy dependence of the photoluminescence excitation spectra.

We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

We fabricated sub-230-nm (far UV-C) light emitting diodes (LEDs) on a single-crystal AlN substrate. With 20 quantum well cycles implemented to enhance carrier injection into the active layers, over 1-mW output power (1.4 and 3.1 mW for 226- and 229-nm LEDs, respectively) was obtained under 100-mA operation. The maximum output power reached 21.1 mW for the single-chip 229-nm LED operating at 700 mA, without significant drooping. The forward voltage for both sub-230-nm LEDs operating at 100 mA was low (5.9 V) due to their low resistances and ideal Ohmic contacts between metal and semiconductor components. Additionally, wall plug efficiencies were 0.24% and 0.53% for the 226- and 229-nm LEDs, respectively. The lifetime of the 226-nm LED while operating at 25 °C reached over 1500 h and did not show current leakage, even after 1524 h. This long lifetime will be achieved by improving carrier injection due to many quantum wells, using a high-quality AlN substrate and achieving high wall plug efficiency.

Quantum dot (QD) superlattices have the potential to provide new optical properties and functions based on interactions between adjacent QDs. Two types of interactions occur between the QDs: energy transfer (ET) from small-sized QDs to large QDs and resonant coupling between QDs with equal eigenenergies. Since ET and resonant coupling strongly depend on the distance between QDs, it is critical to precisely control the distance to understand the interaction mechanism. In this review, we describe that the distance between QDs can be controlled with an accuracy of 1 nm by a layer-by-layer method and further explain the mechanisms of ET and resonant coupling between adjacent QDs.