No abstract

The influence of different thermal oxidation/nitridation durations (5,10,15, and 20 minutes) at 400 C for transforming metallic Ho sputtered on Ge substrate in N 2 O gas ambient have been systemically investigated to develop Ho 2 O 3 /Ge based on metal-oxide-semiconductor (MOS) device. The structural and chemical properties of the film were characterized using X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy. Cubic-Ho 2 O 3 dielectric layer has been formed along with sandwiched interfacial layer (IL) between substrate Ge and high-k interface comprising tetragonal-GeO 2 , GeO x , and cubic-Ge 3 N 4 compounds. Energy band alignment for Ho 2 O 3 /IL/Ge MOS stack has been determined from XPS spectrum where 10-minute sample exhibited maximum conduction band offset, ΔE c~2 .47 eV and valance band offset, ΔE v~4 .67 eV, inducing lower leakage current density, J~10 −5 A cm −2 at the higher electrical breakdown, E BD~8 .59 MV cm −1 . The electrical results of this sample also rev-

No abstract

No abstract