Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation

Onik, Tahsin Ahmed Mozaffor; Hawari, Huzein Fahmi; Sabri, Mohd Faizul Mohd; Wong, Yew Hoong

doi:10.1016/j.apsusc.2021.148949

Cited by 9 publications

(9 citation statements)

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“…The band alignment of Ho 2 O 3 /IL/Ge system has been developed by applying the same technique described elsewhere in the literature. 27,58 The VB spectrums were used to estimate the VB edges, E v and VB offsets (VBO) while energy bandgaps, E g were extracted from O1s plasmon loss XPS survey spectrums as displayed in Figure 10. Figure 10A shows the evolution of VB edges, E v in VB spectrums to determine the VBO induced at different oxidation/nitridation durations (5-20) minutes.…”

Section: Band Alignmentmentioning

confidence: 99%

“…Alongside crystallite size, the micro‐strain of finite‐size particles is another important independent factor that can affect the peak broadening of the diffraction pattern. Hence, the total peak broadening of a diffraction pattern is an accumulated impact‐induced from the combination of crystallite size and micro‐strain which is given by Equation () 27

β_{τ} = β_{D} + β_{ε}

where β τ is the total broadening, β D and β ε symbolizes full width with half maximum intensity on account of crystallite size and micro‐strain, respectively.…”

Section: Physical and Electrical Characterizationmentioning

confidence: 99%

“…Figure 17 illustrates average interface trap density, D it with respect to trap energy level ( E C − E ) for various oxidation and nitridation durations (5‐20) minutes. The Terman method has been employed for approximation of average interface trap density D it for the oxidized/nitrided Ho 2 O 3 /IL/Ge MOS capacitor following Equation () 27,41

D_{it} = \frac{∆ V_{g} C_{ox}}{φ_{s} italicqA}

where φ s represents the surface potential of substrate Ge at a specified gate voltage V g and ∆ V g indicates the difference between ideal gate voltage and experimental gate voltage.…”

Section: Physical and Electrical Characterizationmentioning

confidence: 99%

“…Figure 5 demonstrates the leakage current density, J with the function of the electrical field, E for various oxidation and nitridation durations 5, 10, 15, and 20 minutes. The current-voltage (I-V) measurement was transformed to (J-E) plot by applying Equation (5) 27,42. …”

mentioning

confidence: 99%

“…Furthermore, the variation of STD and Q it in response to various oxidation/nitridation duration follows the identical trend as Q eff .Figure17illustrates average interface trap density, D it with respect to trap energy level (E C − E) for various oxidation and nitridation durations (5-20) minutes. The Terman method has been employed for approximation of average interface trap density D it for the oxidized/nitrided Ho 2 O 3 /IL/Ge MOS capacitor following Equation (21) 27,41.…”

mentioning

confidence: 99%

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Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Onik

Hawari

Sabri

et al. 2021

Intl J of Energy Research

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The influence of different thermal oxidation/nitridation durations (5,10,15, and 20 minutes) at 400 C for transforming metallic Ho sputtered on Ge substrate in N 2 O gas ambient have been systemically investigated to develop Ho 2 O 3 /Ge based on metal-oxide-semiconductor (MOS) device. The structural and chemical properties of the film were characterized using X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy. Cubic-Ho 2 O 3 dielectric layer has been formed along with sandwiched interfacial layer (IL) between substrate Ge and high-k interface comprising tetragonal-GeO 2 , GeO x , and cubic-Ge 3 N 4 compounds. Energy band alignment for Ho 2 O 3 /IL/Ge MOS stack has been determined from XPS spectrum where 10-minute sample exhibited maximum conduction band offset, ΔE c~2 .47 eV and valance band offset, ΔE v~4 .67 eV, inducing lower leakage current density, J~10 −5 A cm −2 at the higher electrical breakdown, E BD~8 .59 MV cm −1 . The electrical results of this sample also rev-

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Section: Band Alignmentmentioning

confidence: 99%

β_{τ} = β_{D} + β_{ε}

where β τ is the total broadening, β D and β ε symbolizes full width with half maximum intensity on account of crystallite size and micro‐strain, respectively.…”

Section: Physical and Electrical Characterizationmentioning

confidence: 99%

D_{it} = \frac{∆ V_{g} C_{ox}}{φ_{s} italicqA}

where φ s represents the surface potential of substrate Ge at a specified gate voltage V g and ∆ V g indicates the difference between ideal gate voltage and experimental gate voltage.…”