No abstract

A step-like change in the interface built-in potential by controlling the ferroelectric polarization has been observed in PLZT thin film sputtered on GaAs single crystal heterostructure junction. We have developed a nonvolatile memory FET by using this MFS (Metal-Ferroelectric-Semiconductor) construction. A typical performance of the GaAs device with a p-channel mode operation is that the writing (“0” to “1” threshold) gate voltage Von=1.5 V, the erasing (“1” to “0”) gate voltage Voff=6.0 V, and the on state drain current Ion=0.1 mA. This operation power level obtained here is about one order of magnitude smaller than that of similar type devices using other ferroelectrics such as Bi4Ti3O12, PZBFN and SbSI. A series of technical data for the fabrication technologies including thin film deposition of the ferroelectric are presented, and the analyses on the device performance are also discussed.

We consider the polarization of unstable type-IIB D0-branes in the presence of a background five-form field strength. This phenomenon is studied from the point of view of the leading terms in the non-abelian Born Infeld action of the unstable D0-branes. The equations have SO(4) invariant solutions describing a non-commutative 3-sphere, which becomes a classical 3-sphere in the large-N limit. We discuss the interpretation of these solutions as spherical D3-branes. The tachyon plays a tantalizingly geometrical role in relating the fuzzy S 3 geometry to that of a fuzzy S 4 .

Chemical vapor deposition of PbTiO3 thin film on the substrate of Pt plate has been successfully made. (100)- and (001)-oriented PbTiO3 film has been obtained under a certain deposition condition. Surface of the film is smoother and the deposition rate of 8.3 µm/h is much higher, as compared with those of conventional sputtering method.

The illustration of the mechanism of fabrication of dispersive microemulsion enclosing Ag-NPs.