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For In0.53Ga0.47As/AlAs resonant tunneling diodes, the peak structure in the capacitance-voltage ( C-V) characteristics in the negative differential resistance (NDR) region was investigated. We experimentally reveal that the electron sheet density that is responsible for the capacitance peak is equal to half of that in the quantum well at the peak voltage. The derived electron sheet density in the quantum well at the peak current is 3.2×1011 cm-2 and the resulting electron lifetimes in the quantum well are 320 and 580 fs for 2.0- and 2.3-nm AlAs barriers.

We have investigated the resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double-barrier resonant interband tunneling diodes with extremely thin AlSb barriers. Although no negative differential resistance (NDR) was observed for the diode without AlSb barrier layers, NDR appeared when 0.5-monolayer(ML)-thick AlSb barrier layers were inserted. As the thickness of AlSb barriers (Lb) increased from 0.5 to 2 ML, the difference between the peak current density and the valley current density increased. This result indicates the crucial role of the extremely thin AlSb barrier layers that are responsible for the resonance level and move it up toward the GaSb valence-band edge with an increase in Lb.

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