A novel multiple-valued logic gate using resonant tunneling devices

Waho, Takao; Chen, Kevin J.; Yamamoto, Mikio

doi:10.1109/55.491836

Cited by 40 publications

(18 citation statements)

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“…We have dropped the subscript . A damping constant for the wave function in the quantum well can then be defined accordingly (10) This allows us to express the electron wave function in the well as a linear combination of damping waves and for the solution of the Schrödinger equation with the imaginary potential. This form for the wave function exhibits clearly that current conservation for the electronic state is not preserved.…”

Section: A Envelope Function Models Of Rtd'smentioning

confidence: 99%

“…It is what distinguishes the RTD from other interesting quantum device concepts that have been proposed but that show weak, if any, desired phenomena at room temperature. A variety of circuit functions has already been demonstrated, providing proof-of-concept of proposed applications [7]- [10]. The main issue at present is not, in fact, the RTD performance itself but the monolithic integration of RTD's with transistors [high electron mobility transistors (HEMT's) or heterojunction bipolar transistors (HBT's)] into integrated circuits with useful numbers and density of devices.…”

Section: Introductionmentioning

confidence: 99%

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Resonant tunneling diodes: models and properties

et al. 1998

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Section: A Envelope Function Models Of Rtd'smentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Resonant tunneling diodes: models and properties

et al. 1998

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“…When connected in series, RTDs provide multiple-peak structures in their I-V characteristics, which make it attractive for multiple-valued logic (MVL) [5]. MVL circuit applications are based on the Monostable-to-Multistable transition Logic (MML) [6], an extension of the binary MOBILE.…”

Section: Introductionmentioning

confidence: 99%

“…The basic MOBILE is a rising edge triggered current controlled gate which consists of two RTDs (the load and driver RTDs) connected in series and driven by a switching bias voltage ( bias V ). When connected in series, RTDs provide multiple-peak structures in their I-V characteristics, which make it attractive for multiple-valued logic (MVL) [5]. MVL circuit applications are based on the Monostable-to-Multistable transition Logic (MML) [6], an extension of the binary MOBILE.…”

Section: Introductionmentioning

confidence: 99%

Design of RTD-Based NMIN/NMAX Gates

Núñez

Quintana

Avedillo

2008

2008 8th IEEE Conference on Nanotechnology

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Abstract-A novel implementation of NMIN/NMAX gates based on RTDs and transistors is presented. In this paper we will derive the relations that circuit representative parameters must verify to obtain a correct behaviour by means of the principles of the Monostable-to-Multistable Logic (MML). HSPICE simulations will be used to check our theoretical results.Index Terms-Resonant tunneling diodes, Multivalued logic circuits, Nanotechnology. I. INTRODUCTIONResonant tunneling diodes (RTDs) are very fast non linear circuit elements which have been integrated with transistors to create novel quantum devices and circuits. They are today considered the most mature type of quantum-effect devices, already operating at room temperature, and being promising candidates for future nanoscale integration. ). When connected in series, RTDs provide multiple-peak structures in their I-V characteristics, which make it attractive for multiple-valued logic (MVL) [5]. MVL circuit applications are based on the Monostable-to-Multistable transition Logic (MML) [6], an extension of the binary MOBILE. Logic operation is based on the sequential switching (in increasing order of peak current values) of the RTDs connected in series, which is produced when the bias voltage rises to an appropriate value. Logic functionality is achieved by embedding an input stage (compound-semiconductor transistors, HEMT or HBT) which modifies, according the applied input signal, the peak current of some of the RTDs.The MIN and the MAX functions are applied in the multivalued logic signal processing and they are also useful for analog signal processing [7]. In this paper, we present the architecture of a two-input negated MIN (NMIN) and negated MAX (NMAX) gates by using RTDs and HFET transistors.These gates operate properly in a certain frequency range; that is, they exhibit both a minimum operating frequency and a maximum one. The frequency range depends on the gate fan-out. From the design point of view it should be desirable to have gates without the minimum limit (correct operation from DC up to a maximum frequency). A correct DC operation of this kind of structures requires a proper choice of the size of the RTDs and the transistors. This paper analytically studies this problem and obtains relations between RTD and transistor parameters that ensure a correct operation of the circuit. In order to simplify the analysis we have resorted to piecewise linear descriptions for the RTD driving point characteristics (in red in Fig. 1a). Fig. 1b shows the structure of the NMIN/NMAX circuit based on MML composed by two NDR devices, the driver and the load. The load consists of the series connection of two RTDs whereas the driver is composed by two series connected RTDs and two HFET transistors. The high value of the bias voltage, V bias = V bias H , is selected in order to have two RTDs switched when it is applied. In our analysis, we have considered three specific, feasible voltage values of V in , the high ( H in V ), medium ( M i n V ) and low ( L i n V ) voltages, a...

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“…The negative differential resistance (NDR) characteristics of RT devices directly support multi-valued logic [32] of the sort required by the reconfiguration system and a number of 3-state memory cells have already been proposed [33], [34], [35].…”

Section: Reconfigurable Technologymentioning

confidence: 99%

A polymorphic hardware platform

Beckett

Proceedings International Parallel and Distributed Processing Symposium

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A novel multiple-valued logic gate using resonant tunneling devices

Cited by 40 publications

References 10 publications

Resonant tunneling diodes: models and properties

Resonant tunneling diodes: models and properties

Design of RTD-Based NMIN/NMAX Gates

A polymorphic hardware platform

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