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We study on electrical and light emitting characteristics of ZnO nanorods array when an electric field is applied in lateral direction to the axis of ZnO nanorods. ZnO nanorods grown on an insulator substrate are isolated with each other, i.e. there is no continuous nucleation layer of ZnO at the base of nanorods. When the applied lateral electric field is weak, no electric current and no light emission are observed. When the electric field becomes strong, however, an electric current begins to flow and bluish white light is emitted in the form of many streaks. These light streaks start from cathode and travel in all directions.

We fabricated a DC inorganic electroluminescent (EL) device whose structure is ITO electrode / ZnS:Mn / ZnO (Mn) nanorods / p−/p++-Si(111) / Au electrode. ZnO nanorods were grown by chemical vapor deposition method combined with laser ablation. ZnS:Mn and ITO were deposited by electron-beam-deposition. We studied on annealing effects of ZnO nanorods on the electrical and electroluminescent characteristics of this device. The device without annealing showed a low breakdown voltage, and any EL emission could not be observed. On the other hand, the device with annealing showed higher impedance and higher breakdown voltage, and the EL emission from the ZnS:Mn layer was observed. An intense EL emission was observed from a peripheral of ITO electrode. An EL emission from the inside area of ITO electrode was very weak.