In organometallic vapor phase epitaxial growth of GaN on sapphire, the role of the lowtemperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The interlayer approach permits tailoring of the film stress to optimize film structure and properties.

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1−xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed.

In organometallic vapor phase epitaxial growth of AlGaN on sapphire, the role of the low-temperature-deposited interlayers on a high-temperature-grown GaN layer was investigated by in-situ stress measurement, X-ray diffraction, and transmission electron microscopy. Crack-free and lowdislocation-density AlGaN with the whole compositional range has been realized on the sapphire substrate.

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