Mass transport and the reduction of threading dislocation in GaN

Nitta, Shugo; Kariya, Michihiko; Kashima, Takayuki; Yamaguchi, S.; Amano, Hiroshi; Akasaki, Isamu

doi:10.1016/s0169-4332(00)00089-1

Cited by 35 publications

(26 citation statements)

References 11 publications

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“…Interrupted growth studies indicated that the aperture partially filled with GaN while the sample was heated during the regrowth process as a result of mass transport of material from the surface into the aperture. 9,10 The surface directly above the apertures did not entirely planarize during the regrowth; a small depression could still be observed, as illustrated in Fig. 2͑c͒.…”

Section: Device Fabricationmentioning

confidence: 97%

AlGaN/GaN current aperture vertical electron transistors with regrown channels

Ben-Yaacov

Seck

Mishra

et al. 2004

Journal of Applied Physics

140

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AlGaN/GaN current aperture vertical electron transistors with regrown aperture and source regions have been fabricated and tested. A 2 μm thick GaN:Si drain region followed by a 0.4 μm GaN:Mg current-blocking layer were grown by metalorganic chemical vapor deposition on a c-plane sapphire substrate. Channel apertures were etched, and a maskless regrowth was performed to grow unintentionally doped GaN inside the aperture as well as above the insulating layer, and to add an AlGaN cap layer. Cl2 reactive ion etching was used to pattern the device mesa, and source, drain, and gate metals were then deposited. Devices were achieved with a maximum source-drain current of 750 mA/mm, an extrinsic transconductance of 120 mS/mm, and a 2-terminal gate breakdown of 65 V while exhibiting almost no DC-RF dispersion for 80 μs pulsed I–V curves. The suppression of DC-RF dispersion was shown to result from the absence of the large electric fields at the surface on the drain-side edge of the gate that are present in high electron mobility transistors. Parasitic leakage currents, which were present in all devices, have been studied in detail. Three leakage paths have been identified, and methods to eliminate them are discussed.

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Section: Device Fabricationmentioning

confidence: 97%

AlGaN/GaN current aperture vertical electron transistors with regrown channels

Ben-Yaacov

Seck

Mishra

et al. 2004

Journal of Applied Physics

140

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“…The densities in the GaN template layers are reported to be in the 10 8 cm À2 range for a-type dislocations with Burgers vector b ¼ 1 3 h1 12 0i and a+c-type dislocations with Burgers vector b ¼ 1 3 h1 12 3i, whereas the density of c-type dislocations with Burgers vector b ¼ h0 0 0 1ican approach the 10 7 cm À2 range at best [11]. Various advanced techniques, such as FIELO [12], FACE-LO [13], Pendeo-Epitaxy [14] and mass transport techniques [15], were contrived to obtain lowdislocation-density GaN crystal. Complicated microstructures, such as wing tilting, 901 bending of TDs, and generation of horizontal dislocations (HDs) have been reported in the GaN layers by the above techniques [16,17].…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Zhou

Ren

Dapkus

2005

Journal of Crystal Growth

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“…As a result, InGaN was grown with a stable (11 2 2) facet structure. Subsequently, we annealed the InGaN layer and observed that its mass transport caused the embedding of the InGaN facet structure [3]. Finally, we fabricated on MQW structure on the planarized InGaN template and investigated its characteristics.…”

mentioning

confidence: 99%

Evaluation of multiple‐quantum‐well structure on InGaN template using (11$ \bar 2 $2) facet growth and mass transport

Fujita¹,

Miyatake²,

Shinagawa³

et al. 2010

Phys. Status Solidi (c)

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We succeeded in the fabrication of a thick InGaN template by (11$ \bar 2 $2) facet growth and mass transport. Thick InGaN was grown on a GaN (11$ \bar 2 $2) facet with a stable facet structure. After 20 min annealing under a flow of NH3 and N2, the InGaN with the (11$ \bar 2 $2) facet was perfectly embedded owing to mass transport. Subsequently, a multiple‐quantum‐well structure was fabricated on the InGaN template and characterized using monochromatic cathodeoluminescence measurement. As a result, we found that there were two regions with peak emission wavelengths of 420 and 500 nm because of the compositional pulling effect. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Mass transport and the reduction of threading dislocation in GaN

Cited by 35 publications

References 11 publications

AlGaN/GaN current aperture vertical electron transistors with regrown channels

AlGaN/GaN current aperture vertical electron transistors with regrown channels

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Evaluation of multiple‐quantum‐well structure on InGaN template using (11$ \bar 2 $2) facet growth and mass transport

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