Six assemblies of equal sized hard spheres have been constructed in a manner which is a modification of Bennett's global method, and packing fractions, W ( r ) and I&) of the assemblies have been calculated. Some of the W ( r ) and I,(s) have subpeaks or shoulders on the outer side of the second peaks, which are characteristic of many amorphous transition metals and their alloys. A geometrical origin of the occurrence of the subpeak or shoulder in W ( r ) is briefly discussed. W ( r ) und I,(a) der Anordnungen berechnet. Einige der W ( r ) und I&) haben Submaxima oder Schultern auf der Flanke des zweiten Maximums, die fiir viele amorphe Ubergangsmetalle und ihre Legierungen charakteristisch sind. Ein geometrischer Ursprung fur das Auftreten dieses Submaximurns oder der Schulter in W ( r ) wird diskutiert. Sechs Anordnungen von harten Kugeln gleicher GroDe werden mit der modifizierten Bennett-Methode konstruiert und die Packungsanteile

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Study on further reducing the epitaxial silicon temperature down to 250°C in lowenergy bias sputtering Summary Abstract: The role of lowenergy ion bombardment during the growth of epitaxial TiN(100) films by reactive magnetron sputtering: Defect formation and annihilation Device-grade epitaxial single silicon layers have been formed at extremely low temperatures of about 300 "C by low-energy bias sputtering in conjunction with in situ substrate surface cleaning and an ultraclean processing environment. Dopant impurities in the target material are fully incorporated into the sputter-deposited silicon film and these impurities are 100% electrically activated without any additional heat cycles. An epitaxial silicon film having a resistivity as low as 0.0014 n cm has been obtained using a heavily arsenic-doped silicon block as a target material. A p-n junction diode formed by directly depositing a phosphorus-doped n-type epilayer on a p-type substrate indicates a reverse current level as low as 1.88 X 10-9 A/cm 2 at a reverse bi.as voltage of 5 V, thus verifying that the in situ substrate surface cleaning by low-energy Ar ion bombardment is very effective and damage free. The electrical characteristics of a grown film have shown a good correlation to the crystal structure of the film, which is primarily determined by the energy of ions concurrently bombarding the growing film surface. 4756 J.

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