Articles you may be interested inSilicon nanocrystals with high boron and phosphorus concentration hydrophilic shell-Raman scattering and Xray photoelectron spectroscopic studies

We used a density functional method to investigate the mechanism of negative-bias temperature instability (NBTI) and resultant structural changes of Si/SiO2 and Si/SiOxNy interfaces. The reaction energies for the water- and hydrogen-originated instabilities of several interface defects show that water-originated reactions of oxygen and nitrogen vacancies occur most easily. The larger instability of the Si/SiOxNy interface, compared with the Si/SiO2 interface, can be understood in terms of the difference in reaction energies. According to the calculated nitrogen 1s core-level shifts of the nitrogen atoms at the Si/SiOxNy interface, it is possible to identify a NBTI-generated structure at the Si/SiOxNy interface by x-ray photoelectron spectroscopy.

A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.

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