FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films obtained under deposition parameters such as bath temperature (90 °C), deposition period (90 min), electrolyte concentration (0.15 M) and pH of the reactive mixture (pH 2.5). The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. X-ray diffraction displayed a pattern consistent with the formation of an orthorhombic structure, with a strong (110) preferred orientation. Atomic force microscopy image showed the substrate surface is well covered with irregular grains. A direct band gap of 1.85 eV was obtained according to optical absorption studies.   Keywords: Iron sulfide, X-ray diffraction, chemical bath deposition, thin films

In this study, the chemical bath deposition technique was used to produce tin sulfide thin films. The SnS films have been prepared using stannous chloride as a tin ion source and sodium thiosulphate as a sulfur ion source. Ethylenediaminetetraacetic acid disodium salt-2-hydrate was used as complexing agent in the chemical bath deposition process. The crystallographic analysis and film thickness were characterized using X-ray diffraction and profilometer, respectively.There were many deposition parameters which influenced the deposition of SnS films. Each deposition parameter influenced all the others. Based on the experimental results, the thickest films were obtained from a solution of pH 12, deposition time of 3 hours,bath temperature of 50 °C, 0.15M of SnCl2 and 0.5 M of Na2S2O3 solution.