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Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.

The new main-chain benzoxazine copolymer oligomers with bulky hydrocarbon end groups are first designed and synthesized. In particular, the aliphatic diamine based copolymers owning low dielectric constants (<3) and ultralow dielectric losses (<0.005) under high frequencies, is suitable for applications in the field of high-frequency communications. Therefore, this work not only provides a facile and effective protocol to simultaneously obtain excellent high-frequency dielectric properties, and improved processing and thermal properties of benzoxazine resins, but also widens the scope of the design and synthesis of functional and high-performance thermosetting polymers.