A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers. By controlling the degree of doping and the thickness of these layers, according to the SJ theory, this structure operates as a pn junction with low on-resistance and high breakdown voltage. Analytical formulas for the ideal specific on-resistance and the ideal breakdown voltage of SJ devices are theoretically derived. Analysis based on the formulas and device simulations reveals that the on-resistance of SJ devices can be reduced to less than 10-2 that of conventional devices.

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Performances of majority-and minority-carrier semiconductor superjunction devices are examined and compared to that of standard devices in terms of forward current density, reverse leakage current, and switching charge. Based on twodimensional simulations and theoretical calculations, it is shown that two orders of magnitude improvement in forward current density, an order of magnitude improvement in switching charge for majority-carrier superjunction devices, and an order of magnitude improvement in forward current density for minority-carrier superjunction devices are feasible when compared to standard devices.