Completely vertical trench gate metal oxide semiconductor field-effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time. These MOSFETs exhibited enhancement-mode operation with a threshold voltage of 3.7 V and an on-resistance of 9.3 mΩ·cm2. The channel mobility was estimated to be 131 cm2/(V·s) when all the resistances except for that of the channel are considered. Such structures, which satisfy the key words “vertical”, “trench gate”, and “MOSFET”, will enable us to fabricate practical GaN-based power switching devices.
This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al2O3. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the Vth of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the Vth increases with gate dielectric thickness, exceeding 3.5 V for gate dielectrics 25 nm thick.
PACS 45.50.-j -Dynamics and kinematics of a particle and a system of particles PACS 45.05.+x -General theory of classical mechanics of discrete systems PACS 03.65.Vf -Phases: geometric; dynamic, topological Abstract -Hamiltonian monodromy -a topological property of the bundle of regular tori of a static Hamiltonian system which obstructs the existence of global action-angle variables-occurs in a number of integrable dynamical systems. Using as an example a simple integrable system of a particle in a circular box with quadratic potential barrier, we describe a time-dependent process which shows that monodromy in the static system leads to interesting dynamical effects.
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