Single crystals of ZrS2 of the Group IVB transition metal dichalcogenide are synthesized by a chemical vapor transport method. The crystals are characterized by Raman spectroscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy, and energy dispersive X‐ray spectroscopy. Field‐effect transistors are fabricated on Si substrates using exfoliated multilayer ZrS2 flakes as a channel material. N‐channel characteristics with an on/off ratio of approximately 200 are observed, and the field‐effect mobility is estimated. The large hysteresis in the transfer curves and the time‐dependent drain‐to‐source current can be attributed to the charge‐trapping centers at the ZrS2/SiO2 interface. These results imply the significance of the interface and the potential applicability of ZrS2 as a novel 2D material for nanoelectronic devices.

The interface between two-dimensional semiconductors and metal contacts is an important topic of research of nanoelectronic devices based on two-dimensional semiconducting materials such as molybdenum disulfide (MoS2). We report transport properties of thin MoS2 flakes in a field-effect transistor geometry with Ti/Au and Al contacts. In contrast to widely used Ti/Au contacts, the conductance of flakes with Al contacts exhibits a smaller gate-voltage dependence, which is consistent with a substantial electron doping effect of the Al contacts. The temperature dependence of two-terminal conductance for the Al contacts is also considerably smaller than for the Ti/Au contacts, in which thermionic emission and thermally assisted tunneling play a dominant role. This result is explained in terms of the assumption that the carrier injection mechanism at an Al contact is dominated by tunneling that is not thermally activated.Comment: 17 pages, 9 figure

Misfit layer compounds are another family of layered materials, which are typically described as (MX) n TX 2 (M = Sn, Pb, Bi, rare earth metals; T = Nb, Ta, Ti, V, Cr; X = S, Se; 1.08 < n < 1.23). [7][8][9] They consist of MX and TX 2 sublattices. These subsystems have a different geometry in the a-b plane. The projection of the typical crystal structure along [1 0 0] is shown in

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