Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels

Shimazu, Yoshihiro; Iwabuchi, Tatsuya; Arai, Kensuke; Shioya, Inoru

doi:10.1016/j.physleta.2019.126073

Cited by 5 publications

(4 citation statements)

References 29 publications

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“…A specialized probe station is typically required to obtain a large B-field, often involving the use of a cryostat with a cryogenic superconducting magnet. The AC Hall effect measurements, where a coil is used to generate the AC magnetic field, which is advantageous over DC measurement as it enables fast and low field measurements <0.1 T, can also be used [110].…”

Section: Challenges Of Hall Effect Measurementmentioning

confidence: 99%

Electrical characterization of 2D materials-based field-effect transistors

et al. 2020

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Two-dimensional (2D) materials hold great promise for future nanoelectronics as conventional semiconductor technologies face serious limitations in performance and power dissipation for future technology nodes. The atomic thinness of 2D materials enables highly scaled field-effect transistors (FETs) with reduced short-channel effects while maintaining high carrier mobility, essential for high-performance, low-voltage device operations. The richness of their electronic band structure opens up the possibility of using these materials in novel electronic and optoelectronic devices. These applications are strongly dependent on the electrical properties of 2D materials-based FETs. Thus, accurate characterization of important properties such as conductivity, carrier density, mobility, contact resistance, interface trap density, etc is vital for progress in the field. However, electrical characterization methods for 2D devices, particularly FET-related measurement techniques, must be revisited since conventional characterization methods for bulk semiconductor materials often fail in the limit of ultrathin 2D materials. In this paper, we review the common electrical characterization techniques for 2D FETs and the related issues arising from adapting the techniques for use on 2D materials.

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Section: Challenges Of Hall Effect Measurementmentioning

confidence: 99%

Electrical characterization of 2D materials-based field-effect transistors

et al. 2020

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“…Remarkably, the estimated carrier densities of (34-80) × 10 12 cm −2 are much higher than the carrier density for Au-contacted MoS 2 flakes that are back gated via SiO 2 with a thickness of ∼300 nm, the reported values of which are typically (3-10) × 10 12 cm −2 for the positive high values of V g . 28,31,32,41,49,52) The quite high carrier density of the Al-contacted flakes found in this study directly indicates the significant carrier doping due to the Al contact. Figure 4(b) shows the carrier density as a function of V g for device A.…”

Section: Resultsmentioning

confidence: 67%

“…The Hall voltage was measured under ac magnetic fields using a lock-in amplifier (EG&G 5210). 49) In this measurement, magnetic fields were produced using an electromagnet with a diameter of 114 mm. The typical amplitude and frequency of the ac magnetic fields were 0.03 T and 5 Hz, respectively.…”

Section: Experimental Methodsmentioning

confidence: 99%

Observation of high carrier density, ohmic contact, and metallic conductivity down to 5 K in aluminum-contacted multilayer MoS₂ flakes

Shimazu¹,

Ono²,

Miyazawa³

et al. 2021

Jpn. J. Appl. Phys.

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Molybdenum disulfide (MoS2) has attracted considerable attention, because the monolayers or multilayers of MoS2 may become building blocks of electronic/optoelectronic devices in post-silicon technology. The contact metals have significant effects on the transport properties of MoS2 devices. We previously reported that unconventional transport properties of back-gated MoS2 flakes with Al contact may be attributed to a contact-induced doping effect. However, measurements of carrier density, which can confirm the doping effect, were not performed. In this paper, we present the experimental results of carrier density estimated via Hall effect measurements. The observed carrier densities of the Al-contacted MoS2 flakes ((3–8) × 1013 cm−2) are ∼10 times greater than those reported for Au-contacted MoS2 flakes, indicating the doping effect due to the Al contact. We also observe ohmic contact and metallic conductivity down to 5 K for the Al-contacted flakes, which are distinct from the properties of Au-contacted MoS2 flakes.

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“…This is not guaranteed, in principle, to improve the situation, because, in the presence of an AC bias, the flicker noise spectrum would most probably be translated around the bias current frequency. However, an improvement could be achieved by using a lock-in technique for the detection of the Hall signal [30] (however, the situation studied in such a paper is different, with a constant DC bias and an AC magnetic field), which should suppress part of the flicker noise, since it is not correlated with the AC signal.…”

Section: S I L S I R I Outmentioning

confidence: 99%

Optimization of the Sensitivity of a Double-Dot Magnetic Detector

2020

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We investigate, by means of numerical simulations, the lowest magnetic field level that can be detected with a given relative accuracy with a sensor based on a double-dot device fabricated in a high-mobility two-dimensional electron gas. The double dot consists of a cavity delimited by an input and an output constriction, with a potential barrier exactly in the middle. In conditions of perfect symmetry, a strong conductance enhancement effect appears as a consequence of the constructive interference between symmetric trajectories. When the symmetry is broken, for example by the presence of an applied magnetic field, this enhancement effect is suppressed. We explore the design parameter space and assess the minimum magnetic field value that can be measured with a given accuracy in the presence of flicker noise.

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Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels

Cited by 5 publications

References 29 publications

Electrical characterization of 2D materials-based field-effect transistors

Electrical characterization of 2D materials-based field-effect transistors

Observation of high carrier density, ohmic contact, and metallic conductivity down to 5 K in aluminum-contacted multilayer MoS₂ flakes

Optimization of the Sensitivity of a Double-Dot Magnetic Detector

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Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels

Cited by 5 publications

References 29 publications

Electrical characterization of 2D materials-based field-effect transistors

Electrical characterization of 2D materials-based field-effect transistors

Observation of high carrier density, ohmic contact, and metallic conductivity down to 5 K in aluminum-contacted multilayer MoS2 flakes

Optimization of the Sensitivity of a Double-Dot Magnetic Detector

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Product

Resources

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Observation of high carrier density, ohmic contact, and metallic conductivity down to 5 K in aluminum-contacted multilayer MoS₂ flakes