An integrated a-Si:H thin-film transistors (TFTs) gate driver on array with both forward and backward scanning function is proposed. The single stage of the gate driver only consists of seven TFTs. The bi-direction scannable function is just realized by controlling the turning-on sequence of two input TFTs. Both scanning modes use the same driving TFT for pulling-up and pullingdown the output voltage and the same circuit unit for holding the low level. The proposed gate driver is fabricated in the 4.5 G TFT production line, and the measurements with the fabricated drivers verify the feasibility of the proposed driver.Index Terms-A-Si:H, bi-directional scan, gate driver, thin-film transistors (TFTs).

No abstract

No abstract

+ junctions have been proposed and fabricated successfully on an indium-tin-oxide (ITObcoated glass. An obtained orange TFLED reveals a brightness of 207 cd / m 2 at an injection current density of 600 mA / cm2, which is the brightest one ever reported for a-SiC:H TFLED's at the same injection current density. This significant increase of brightness could be ascribed to the combined effect of reduced interface states by using the graded-gap junctions, lower contact resistance due to postmetallization annealing, and higher optical gaps of the doped layers.

No abstract