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Dielectric gratings are a promising method of achieving light trapping for thin crystalline silicon solar cells. In this paper, we systematically examine the potential performance of thin silicon solar cells with either silicon (Si) or titanium dioxide (TiO 2) gratings using numerical simulations. The square pyramid structure with silicon nitride coating provides the best light trapping among all the symmetric structures investigated, with 89% of the expected short circuit current density of the Lambertian case. For structures where the grating is at the rear of the cell, we show that the light trapping provided by the square pyramid and the checkerboard structure is almost identical. Introducing asymmetry into the grating structures can further improve their light trapping properties. An optimized Si skewed pyramid grating on the front surface of the solar cell results in a maximum short circuit current density, J sc , of 33.4 mA cm −2 , which is 91% of the J sc expected from an ideal Lambertian scatterer. An optimized Si skewed pyramid grating on the rear performs as well as a rear Lambertian scatterer and an optimized TiO 2 grating on the rear results in 84% of the J sc expected from an optimized Si grating. The results show that submicron symmetric and skewed pyramids of Si or TiO 2 are a highly effective way of achieving light trapping in thin film solar cells. TiO 2 structures would have the additional advantage of not increasing recombination within the cell.

The perfect absorption of light in subwavelength thickness layers generally relies on exotic materials, metamaterials or thick metallic gratings. Here we demonstrate that total light absorption can be achieved in ultra-thin gratings composed of conventional materials, including relatively weakly-absorbing semiconductors, which are compatible with optoelectronic applications such as photodetectors and optical modulators. We fabricate a 41 nm thick antimony sulphide grating structure that has a measured absorptance of A = 99.3% at a visible wavelength of 591 nm, in excellent agreement with theory. We infer that the absorption within the grating is A = 98.7%, with only A = 0.6% within the silver mirror. A planar reference sample absorbs A = 7.7% at this wavelength.

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The band-to-band absorption enhancement due to various types of light trapping structures is studied experimentally with photoluminescence (PL) on monocrystalline silicon wafers. Four basic light trapping structures are examined: reactive ion etched texture (RIE), metal-assisted etched texture (MET), random pyramid texture (RAN) and plasmonic Ag nanoparticles with a diffusive reflector (Ag/DR). We also compare two novel combined structures of front side RIE/rear side RAN and front side RIE/rear side Ag/DR. The use of photoluminescence allows us to measure the absorption due to band-to-band transitions only, and excludes parasitic absorption from free carriers and other sources. The measured absorptance spectra are used to calculate the maximum generation current for each structure, and the light trapping efficiency is compared to a recently-proposed figure of merit. The results show that by combining RIE with RAN and Ag/DR, we can fabricate two structures with excellent light trapping efficiencies of 55% and 52% respectively, which is well above previously reported values for similar wafer thicknesses. A comparison of the measured band-band absorption and the EQE of back-contact silicon solar cells demonstrates that PL extracted absorption provides a very good indication of long wavelength performance for high efficiency silicon solar cells.