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Field effect mobility was improved in a 4H-SiC (0001) metal-oxide-semiconductor field-effect transistor with Ba diffusion into the gate oxide and NO passivation. The Ba diffusion process caused Ba interface passivation, which suppressed oxide surface roughening. Free carrier mobility and free carrier density were evaluated through Hall effect measurements using the Van der Pauw technique at room temperature. Passivation by Ba or NO was found to have no effect on free carrier mobility but contributed to increased free carrier density. A free carrier ratio of up to 70% was achieved through combined Ba diffusion and NO passivation.

A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances such as short circuit and unclamped inductive switching capabilities were evaluated.