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Magnetophonon resonance effect of the transverse magnetoresistance is studied in In x Ga1-x As (x=0.53) using a magnetic field modulation technique at temperatures from 40 to 300 K. The resonance arises from GaAs-like phonons at higher temperatures and two mode resonance due to GaAs-like phonons and InAs-like phonons is observed at low temperatures. Band edge effective mass is determined to be 0.0409m 0 at 77 K and 0.0388m 0 at 300 K.

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