In recent years, researchers have been attracted towards the application of Wide-Bandgap (WBG) power semiconductor devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in Electric Vehicle (EV) applications. Their advantages over Silicon (Si) power semiconductors are lower power losses, higher switching frequencies and higher junction temperatures. Thus, the usage of WBG power semiconductor devices for EV power electronic systems is to improve EV efficiency, reliability, and mileage. However, these adoptions are still under challenges in terms of packaging and power converters design. In this paper, future trends and prospects of using WBG power semiconductor devices in EV systems are first presented. Then, recent progress of different commercial WBG power semiconductor devices are reviewed and different solutions in order to solve the research and development challenges are evaluated.