Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Abstract

In recent years, researchers have been attracted towards the application of Wide-Bandgap (WBG) power semiconductor devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in Electric Vehicle (EV) applications. Their advantages over Silicon (Si) power semiconductors are lower power losses, higher switching frequencies and higher junction temperatures. Thus, the usage of WBG power semiconductor devices for EV power electronic systems is to improve EV efficiency, reliability, and mileage. However, these adoptions are still under challenges in terms of packaging and power converters design. In this paper, future trends and prospects of using WBG power semiconductor devices in EV systems are first presented. Then, recent progress of different commercial WBG power semiconductor devices are reviewed and different solutions in order to solve the research and development challenges are evaluated.

Analysis of the THD and Common-Mode Voltage of the Three-Phase Boost-Buck EV Traction Inverter

“…However, due to efficiency requirements and the constraints on the cost and size of the cooling system, the switching frequency of the power switches in the traction inverter is typically limited to a few kilohertz (kHz). Wide-band-gap (WBG) semiconductor power devices such as SiC MOSFETs enable a higher switching frequency due to its much faster switching speed (high dv/dt) and lower switching losses [23]. However, the application of WBG devices exacerbates the challenges associated with a high dv/dt and common-mode (CM) voltage and/or current.…”

Bismaleimide/Phenolic/Epoxy Ternary Resin System for Molding Compounds in High-Temperature Electronic Packaging Applications

“…In recent years, with the rapid development of fifth generation (5G) mobile communication, Internet of Things, new energy vehicles, and automatic drive, wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), have emerged as the most promising next generation semiconductor materials for applications in high-frequency, high-voltage, and high-power devices. − Epoxy molding compounds (EMC) are one of the most widely used encapsulation materials in electronics industry to protect electronic components from external environments, such as physical impact, dust, moisture, heat, and ultraviolet rays . However, conventional EMC are commonly utilized at temperatures below 200 °C, which cannot meet the requirement of the junction temperature of WBG semiconductors (even reach 250 °C). , Excessive heat will impair the performance of the electronic packaging material including thermal, mechanical, and electrical properties. , Therefore, development of a new packaging material with superior high-temperature stability is becoming increasingly crucial in high-power and high-density electronics industry.…”

What Is Next for Automotive Electronics? [Automotive Electronics]

“…The shift to gallium nitride (GaN)-or silicon carbide (SiC)-based power electronics is taking place due to the theoretical limits of Si MOS-FETs that has been reached by the industry for many power systems. Battery charging is maybe the first high-volume market to demonstrate GaN adoption, and SiC devices are now increasingly used in high-voltage power converters with stringent size, weight, and power requirements [1]. Definitively, EVs are considered the heart of the global push toward a more sustainable future.…”

“…GaN and SiC devices are comparable in some ways but have significant differences. Figure 1 presents power capability versus switching frequency for WBG and Si semiconductors for EV applications [1].…”

“…Figure1Power capability versus switching frequency for WBG and Si semiconductors. (Adapted from[1]; used with permission. )…”