Excitons dominate the light absorption and re-emission spectra of monolayer transition-metal dichalcogenides (TMD). Microscopic investigations of the excitonic response in TMD almost invariably extract information from the radiative recombination step, which only constitutes one part of the picture. Here, by exploiting imaging spectroscopic ellipsometry (ISE), we investigate the spatial dependence of the dielectric function of chemical vapor deposition (CVD)-grown WS2 flakes with a microscopic lateral resolution, thus providing information about the spatially varying, exciton-induced light absorption in the monolayer WS2. Comparing the ISE results with imaging photoluminescence spectroscopy data, the presence of several correlated features was observed, along with the unexpected existence of a few uncorrelated characteristics. The latter demonstrates that the exciton-induced absorption and emission features are not always proportional at the microscopic scale. Microstructural modulations across the flakes, having a different influence on the absorption and re-emission of light, are deemed responsible for the effect.

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The interaction of ultrashort pulsed laser radiation with intensities of 1013 W cm−2 and above with materials often results in an unexpected high X-ray photon flux. It has been shown so far, on the one hand, that X-ray photon emissions increase proportionally with higher laser power and the accumulated X-ray dose rates can cause serious health risks for the laser operators. On the other hand, there is clear evidence that little variations of the operational conditions can considerably affect the spectral X-ray photon flux and X-ray emissions dose. In order to enhance the knowledge in this field, four ultrashort pulse laser systems for providing different complementary beam characteristics were employed in this study on laser-induced X-ray emissions, including peak intensities between 8 × 1012 W∙cm−2 < I0 < 5.2 × 1016 W∙cm−2, up to 72.2 W average laser power as well as burst/bi-burst processing mode. By the example of AISI 304 stainless steel, it was verified that X-ray emission dose rates as high as H˙′ (0.07) > 45 mSv h−1 can be produced when low-intensity ultrashort pulses irradiate at a small 1 µm intra-line pulse distance during laser beam scanning and megahertz pulse repetition frequencies. For burst and bi-burst pulses, the second intra-burst pulse was found to significantly enhance the X-ray emission potentially induced by laser pulse and plasma interaction.

Optimizing the processing of organic photovoltaic devices by laser radiation requires a fundamental understanding of the excitation processes during laser radiation−matter interaction. Spatially and temporally resolved pump−probe ellipsometry on poly(methyl methacrylate) (PMMA), excited by single-pulsed ultrafast mid-IR laser radiation, reveals electronic and vibrational excitation as competing excitation processes. Mid-IR laser radiation in the femtosecond regime induces mainly wavelength independent nonlinear excitation of electrons, as predicted by a theoretical model of the induced free charge carrier density. In contrast, mid-IR laser radiation in the picosecond regime enables linear vibrational excitation, provided the laser radiation frequency corresponds to a resonance frequency of PMMA. Thereby, a wavelength selective processing of organic materials may enable faster processing of multilayer systems depending on the polymer specific vibrational modes.