Polymeric materials with an imaging chemistry based on the main chain cleavage under the influence of photogenerated acid are a promising resist platform for EUV lithography. Backbone scission resist materials are, in principle, capable of creating very small structures due to the fact that the removing parts can have dimensions in the order of the monomers that they consist of. Nevertheless, in the case of the commonly used non-chemically amplified materials of this type, issues like sensitivity and poor etch resistance limit their applications, whereas inadequate etch resistance and non-satisfactory process reliability are the usual problems encountered in acid-catalyzed materials based on main chain scission. In this work, we report on optimization of the formulation of new high-sensitive polymeric materials for EUV lithography by tuning the ratio between the photoacid generator (PAG) and the base quencher. In our material design, the acid-catalyzed chain cleavable polymers contain very sensitive acid-labile bonds in their backbone while they remain intact in alkaline ambient. These photoresists were evaluated with several PAG and base quencher (BQ) loadings. The PAG ratio spans from 4% to 7% with respect to polymer weights, whereas the BQ ratio tuned to 5%, 10%, and 15% with respect to PAG weight. High-performance patterning capabilities were achieved for lines\spaces down to 22 nm half-pitch using EUV interference lithography. We report linewidth roughness versus dose-to-size for 25 nm and 22 nm half-pitch for different PAG and BQ loadings and provide a comparison.

No abstract

The aim of the current work was to develop new sensitive polymeric materials for lithographic applications, focusing in particular to EUV lithography, where the main polymer chain is cleaved under the influence of photogenerated acid. Resist materials based on the cleavage of polymer main chain are in principle capable to create very small structures, to the dimensions of the monomers that they consist of. Nevertheless, in the case of the commonly used non-chemically amplified materials of this type issues like sensitivity and poor etch resistance limit their areas of application, whereas inadequate etch resistance and unsatisfactory process reliability are the usual problems encountered in acid catalyzed materials based on main chain scission. In our material design, the acid catalyzed chain cleavable polymers contain very sensitive moieties in their backbone while they remain intact in alkaline ambient. These newly synthesized polymers bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behavior, adhesion to the substrate). Our approach for achieving acceptable etch resistance, a main drawback in other main chain cleavable resists, is based on the introduction of polyaromatic hydrocarbons in the polymeric backbone, whereas the incorporation of an inorganic component further enhances the etch resistance. Single component systems can also be designed following the proposed approach by the incorporation of suitable PAGs and base quencher molecules in the main chain. Resist formulations based on a random copolymer designed according to the described rules evaluated in EUV exhibit ultrahigh sensitivity, capability for high-resolution patterning and overall processing characteristics that make them strong candidates upon further optimization.

No abstract