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We present results on the fabrication and characterization of ridge waveguides in zinc-substituted lithium niobate. High-quality waveguides were fabricated by a combination of liquid-phase epitaxy and multiple applications of ion-beam enhanced etching. The two major demands on ridge waveguides, a very low side-wall roughness and a rectangle shape with side-wall angles close to 90 degrees , were realized simultaneously by using this technique. Single-mode waveguiding at a wavelength of 1064 nm was demonstrated with attenuation values of 0.9 dB/cm.

Ion-beam enhanced etching is used to pattern a bulk lithium niobate crystal with ultrathin membranes. By the implementation of an air gap beneath the membrane, high index contrast is achieved. A buried amorphous layer, created by irradiation with He ions, is removed by means of wet chemical etching in hydro-fluoric acid. Membranes having thicknesses down to 200 nm are fabricated. The etched air gaps and the membranes exhibit a uniform thickness over the entire etched area, and their widths can be purposefully adjusted over a wide range by choosing appropriate ion energies and fluences as well as annealing conditions.

This work presents data on damage evolution, volume expansion and etching behavior of LiNbO3 irradiated with Ar+-ions as a function of irradiation and etching conditions. Single crystals of x- and z-cut LiNbO3 were irradiated at room temperature and 15 K using Ar-ions with energies between 60 and 600 keV and ion fluences between 5 × 1012 and 1 × 1015 cm-2. The damage formation investigated with RBS channeling analysis depends on the crystal cut as well as on the irradiation temperature. Irradiation of z-cut material at 300 K causes complete amorphization at 0.4 dpa (displacements per target atom). In contrast 0.27 dpa are sufficient to amorphize the x-cut LiNbO3. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization to 0.18 dpa. To study the etching behavior ∼500 nm thick amorphous layers were generated via multiple irradiations with Ar+-ions. Etching was performed in HF-solution of different concentration and at different temperatures. The influence of the irradiation and etching conditions on damage formation and etching of LiNbO3 is discussed. In conclusion, negligible etching of the perfect crystal, high etching rates and high contrast of Ion Beam Enhanced Etching (IBEE) allow the realization of high aspect ratio microstructures in LiNbO3.

Homogeneously damaged surface layers of a thickness of 400 nm were generated in x-cut LiNbO 3 single crystals using multipleenergy Ar + -irradiation to study the etching behavior in aqueous HF solutions. Rutherford backscattering/channeling analysis was applied to investigate the damage formation. Different acid temperatures and concentrations were used, showing that the etching rate can be increased by increasing the temperature from 24 to 55°C maintaining the high contrast of the technique. The dissociation of HF in aqueous solution is discussed, and reaction kinetics well established for the HF etching of SiO 2 are then applied to obtain information on the etching mechanism. Therefore, the concentration dependence of the etching rate is analyzed and it is found that the etching process can be described as an attack of either HF or HF 2 − , which is catalytically supported by the presence of H + ions.