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An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP 2 /GaAs/Ge solar cells is presented. The Monte Carlo ion transport code SRIM is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the omnidirectional space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modeling results show that, in the space environment where the incident radiation is omnidirectional, the solar cell will experience a uniform damage distribution through the active region of the cell. The cases of directional spectrum irradiation and omnidirectional irradiation through very thin shielding are also considered. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated.

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In this study we have combined a method of calculating radiation induced damage to solar cells using Non‐Ionizing Energy Loss (NIEL), with models of Earth orbiting radiation in arbitrary orbits, to assess the lifetime of solar cells. This paper provides a comparison of the NIEL technique to results from the JPL Radiation Handbook, and to actual space experimental damage results. In addition, we discuss ways of extending the calculation to newer solar cell materials, as well as environments outside of the Earth's orbit. Copyright © 2000 John Wiley & Sons, Ltd.