Articles you may be interested inA simple and inexpensive circuit for emission and capture deep level transient spectroscopy Rev.

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The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm−3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.

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We report the measurement of the thermal activation energy for the DX-center in Se-doped AIxGaj-xAs grown by metal-organic chemical vapor deposition (MOCVD) for different alloy compositions (x=0.19, 0.23, 0.27, 0.31). The peaks obtained from conventional DLTS are often broad or asymmetric with shoulders on one or both sides. These phenomena often arise from two or more traps which are active in the same temperature range.The capacitive transients are recorded digitally and analyzed directly by applying a nonlinear double exponential fitting routine to the data. This fitting produces two Arrhenius plots and yields the densities of the defect states. From the Arrhenius plots, the capture cross sections at infinite temperature and the thermal activation energies are calculated. These results are then used to simulate the DLTS spectra. Excellent agreement between real and simulated spectra is shown.