A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate.

Detailed experimental and theoretical studies of lateral electron transport in a system of quantum dot chains demonstrate the complicated character of the conductance within the chain structure due to the interaction of conduction channels with different dimensionalities. The one-dimensional character of states in the wetting layer results in an anisotropic mobility, while the presence of the zero-dimensional states of the quantum dots leads to enhanced hopping conductance, which affects the low-temperature mobility and demonstrates an anisotropy in the conductance. These phenomena were probed by considering a one-dimensional model of hopping along with band filling effects. Differences between the model and the experimental results indicate that this system does not obey the simple one-dimensional Mott's law of hopping and deserves further experimental and theoretical considerations.

Ferroelectric materials offer a low-energy, high-speed alternative to conventional logic and memory circuitry. Hafnia-based films have achieved singledigit nm ferroelectricity, enabling further device miniaturization. However, they can exhibit nonideal behavior, specifically wake-up and fatigue effects, leading to unpredictable performance variation over consecutive electronic switching cycles, preventing large-scale commercialization. The origins are still under debate. Using plasmon-enhanced spectroscopy, a non-destructive technique sensitive to <1% oxygen vacancy variation, phase changes, and single switching cycle resolution, the first real-time in operando nanoscale direct tracking of oxygen vacancy migration in 5 nm hafnium zirconium oxide during a pre-wake-up stage is provided. It is shown that the pre-wake-up leads to a structural phase change from monoclinic to orthorhombic phase, which further determines the device wake-up. Further migration of oxygen ions in the phase changed material is then observed, producing device fatigue. These results provide a comprehensive explanation for the wake-up and fatigue with Raman, photoluminescence and darkfield spectroscopy, combined with density functional theory and finite-difference time-domain simulations.