No abstract

No abstract

An in situ tunable diode mounting topology for waveguide switches is presented and utilized to design and fabricate two evanescent-mode -band switching modules of approximately 15% and 25% fractional bandwidth. The ability of the mounting topology to operate in a high-power environment is verified in an evanescent-mode -band switch using six packaged p-i-n diodes, successfully reflecting 4 kW of pulsed power.Index Terms-Diode mount, evanescent mode, high power, p-i-n diodes, waveguide switch, -band.

The thermal characteristics of a PIN-diode waveguide mounting architecture for high-power evanescent mode X-band switches is discussed. The transient thermal heating response is modelled using an extended thermal model which includes both diode and mounting structure. Measured and simulated data are shown for various pulse widths and duty cycles.