2007
DOI: 10.1109/tmtt.2006.889146
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Anin situTunable Diode Mounting Topology for High-Power $X$-Band Waveguide Switches

Abstract: An in situ tunable diode mounting topology for waveguide switches is presented and utilized to design and fabricate two evanescent-mode -band switching modules of approximately 15% and 25% fractional bandwidth. The ability of the mounting topology to operate in a high-power environment is verified in an evanescent-mode -band switch using six packaged p-i-n diodes, successfully reflecting 4 kW of pulsed power.Index Terms-Diode mount, evanescent mode, high power, p-i-n diodes, waveguide switch, -band.

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Cited by 8 publications
(1 citation statement)
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“…In particular, waveguide switches are typically chosen at millimeter-wave (mm-wave) frequencies and beyond due to their low insertion loss and high power handling [1]. A number of technologies for the switching element inside a waveguide have been developed, including electromechanical rotors and PIN diode switches [2]- [5], and RF MEMS and microfluidic-based switches [6]- [11]. However, most of these approaches use traditional metal-machined waveguides, thus are large, heavy, and difficult to integrate with planar microwave technology and on chip.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, waveguide switches are typically chosen at millimeter-wave (mm-wave) frequencies and beyond due to their low insertion loss and high power handling [1]. A number of technologies for the switching element inside a waveguide have been developed, including electromechanical rotors and PIN diode switches [2]- [5], and RF MEMS and microfluidic-based switches [6]- [11]. However, most of these approaches use traditional metal-machined waveguides, thus are large, heavy, and difficult to integrate with planar microwave technology and on chip.…”
Section: Introductionmentioning
confidence: 99%