The development of MEMS acoustic resonators meets the increasing demand for in situ detection with a higher performance and smaller size. In this paper, a lithium niobate film-based S1 mode Lamb wave resonator (HF-LWR) for high-sensitivity gravimetric biosensing is proposed. The fabricated resonators, based on a 400-nm X-cut lithium niobate film, showed a resonance frequency over 8 GHz. Moreover, a PMMA layer was used as the mass-sensing layer, to study the performance of the biosensors based on HF-LWRs. Through optimizing the thickness of the lithium niobate film and the electrode configuration, the mass sensitivity of the biosensor could reach up to 74,000 Hz/(ng/cm2), and the maximum value of figure of merit (FOM) was 5.52 × 107, which shows great potential for pushing the performance boundaries of gravimetric-sensitive acoustic biosensors.

Radio frequency (RF) filters with multiple passbands can meet the needs of miniaturization and integration for 5G communications. This paper reports a dual-mode Lamb wave resonator (DLWR) and a dual-passband filter based on DLWRs. The DLWR consists of a piezoelectric film and two interdigital electrode (IDT) arrays with different thicknesses, which leads to the coexistence of two main modes in the resonator. The resonance frequencies of the two modes can be adjusted separately by changing the thicknesses of the IDTs, which greatly satisfies the requirements of the dual-passband filter. Four DLWRs with different electrode configurations are designed, and the influences of the periodic length and thicknesses of the IDTs on the performance of the DLWR are studied. When the thickness of the piezoelectric layer is 0.75 μm and the two thicknesses of the IDTs are 0.1 μm and 0.3 μm, the resonance frequency of the second main mode is 1.27 GHz higher than the resonance frequency of the first main mode in the DLWR. Furthermore, a dual-passband filter based on the proposed DLWRs is demonstrated with an insertion loss less than 1 dB and a band rejection of about 15 dB. Moreover, two passbands at 2.45 GHz and 3.88 GHz with bandwidths of 66 MHz and 112 MHz, respectively, are achieved. The presented DLWR shows a potential application that can be used to obtain RF filters with adjustable dual passbands.

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The arrival of the 5G era has promoted the need for filters of different bandwidths. Thin-film bulk acoustic resonators have become the mainstream product for applications due to their excellent performance. The Keff2 of the FBAR greatly influences the bandwidth of the filter. In this paper, we designed an AlN-based adjustable Keff2 FBAR by designing parallel capacitors around the active area of the resonator. The parallel capacitance is introduced through the support column structure, which is compatible with conventional FBAR processes. The effects of different support column widths on Keff2 were verified by finite element simulation and experimental fabrication. The measured results show that the designed FBAR with support columns can achieve a Keff2 value that is 25.9% adjustable.