Operation properties of polysilicon-oxide-nitrideoxide-silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%-28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications.Index Terms-Atomic layer deposition (ALD), charge trapping, Flash, HfAlO, nonvolatile memory, polysilicon-oxide-nitrideoxide-silicon (SONOS)-type.

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A tetragonal HfO2 (t-HfO2) with higher-k value and large band gap is investigated in this work. X-ray diffraction analysis shows a t-HfO2 can be formed by using Cl2 plasma treatment at the HfO2/Si interface after a post deposition annealing at 650 °C. The mechanisms of t-HfO2 formation can be attributed to the Si diffusion and oxygen vacancy generation which are formed by Cl2 plasma treatment. From the cross-sectional transmission electron microscope and capacitance-voltage measurement, the k value of this t-HfO2 is estimated to be about 35. The optical band gap value for t-HfO2 is similar to that of the monoclinic.

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