Operation properties of polysilicon-oxide-nitrideoxide-silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%-28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications.Index Terms-Atomic layer deposition (ALD), charge trapping, Flash, HfAlO, nonvolatile memory, polysilicon-oxide-nitrideoxide-silicon (SONOS)-type.

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