Novel SONOS-Type Nonvolatile Memory Device with Suitable Band Offset in HfAlO Charge-Trapping Layer

Tsai, Ping-Hung; Chang‐Liao, Kuei‐Shu; Liu, Chu-Yung; Wang, Tien-Ko; Tzeng, Pei-Jer; Lee, L.S.; Tsai, M. J.

doi:10.1109/vtsa.2007.378901

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2010

2015

Publication Types

Select...

Article2

Book1

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to simultaneously enlarge the memory window, lower the programming/erasing (P/E) voltages, increase the P/E speeds, and improve the charge retention, many dielectrics, e.g. HfO 2 [3], HfLaO x N y [4], HfON [5], TiO 2 [6], HfAlO [7], La 2 O 3 [8] and ZrON [9], have been investigated as CSL to replace Si 3 N 4 in MONOS-type flash memory devices. However, there is no work on Germanium Oxynitride (GeON) as CSL, which has been widely studied as the gate dielectric for Ge MOSFETs due to its higher permittivity, better thermal and chemical stability compared to the native oxide (GeO or GeO 2 ) [10,11].…”

Section: Introductionmentioning

confidence: 99%