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Calculations based on the density functional theory predict the formation of gap states near the Ge conduction-band minimum, due to the presence of the dangling bonds of Ge1+ and Ge2+ atoms at the Ge/GeO2 interface. Additionally, gap states near the valence-band maximum appear in the presence of threefold Ge0+ dangling bonds at the Ge/GeO2 interface. To further discuss the electrical property of the GeO2 near the interface, the oxygen-vacancy-related defect in GeO2 is calculated with bulk oxide structure. The result shows that the thermodynamical-transition level of +2/0 is 5.11 eV above the valence-band maximum of GeO2. The high transition level energy indicates the +2 charge state is a possible source for positive fixed-charges in defective GeO2.

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The comment adds the results of 2×2 TSVs which is an extension of our 2-TSV case, and the clarification of no thermal strain effect on mobility. There are no contradictions with our original paper at all. Note that for the mobility calculation, the temperature dependence can be considered by the band parameters and phonon scattering [1].There is a more sophisticated point suggested coauthor Prof. Goldstein. It is stated in the presented comment that "the stress is not affected by the thermal strains." Indeed, stresses depend explicitly on elastic strains only. Nevertheless, there is implicit dependence of stresses on thermal strains coming from the dependence of