In this study, we have investigated the indentation size effect (ISE) of single crystalline tungsten with low defect density. As expected, the hardness shows a pronounced increase with decreasing indentation depth as well as a strong strain rate dependence. For penetration depths greater than about 300 nm, the ISE is well captured by the Nix–Gao model in the context of geometrically necessary dislocations. However, clear deviations from the model are observed in the low depth regime resulting in a bilinear effect. The hardness behavior in the low depth regime can be modeled assuming a non-uniform spacing of the geometrically necessary dislocations. We propose that the bilinear indentation size effect observed reflects the evolution of the geometrically necessary dislocation density. With increasing strain rate, the bilinear effect becomes less pronounced. This observation can be rationalized by the activation of different slip systems. Graphic abstract

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Wedge indentation experiments were conducted to study the depth dependence of geometrically necessary dislocation (GND) structures in single-crystalline tungsten. Single-crystalline tungsten exhibits a pronounced indentation size effect (ISE), which can be rationalized based on GNDs. The dislocation mechanisms, however, are still under debate. Due to the plane strain condition during the wedge indentation, the dislocations in the cross sections underneath indents could be analyzed based on the Nye tensor and the lattice rotations determined using transmission Kikuchi diffraction. The dislocation structures depend on the size of the indent confirming the different hardness regimes and the bilinear ISE reported recently. For shallow indents, the dislocations are rather localized at the tip of the indent, while with increasing depth the dislocation volume expands; subgrains and distinct rays of increased dislocation density form. At larger depths, the indentation-induced deformation fields exhibit characteristics similar to the kink-type shear at a stationary crack tip. Graphical abstract