With the rise of emerging technologies, nanoelectronics are seen as potential solutions for various security primitives. Memristors are of interest, as they are believed to offer benefits for use as a Physical Unclonable Function (PUF), since their non-linear behavior is inefficient to model in large quantities. A write-time-based PUF has been suggested in the form of a memristor array to avoid the sneak path problem. To amend this approach, a one Zener diode, one memristor crossbar architecture may be used. Such an architecture can virtually eliminate sneak paths in crossbars up to a size that is limited by the saturation current of the Zener diode. This approach allows uniformity and uniqueness among the crossbar, similar to a SRAM-based PUF, where the uniformity in the response is derived from the uniformity of the memory cells. Ultimately, this approach is meant as a beneficial contribution to the novel and relatively new technique of creating a random bit distribution among an array of memristors, as it allows the same technique to be used on a crossbar to offer an improvement in terms of bits per area.

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