The exchange bias H(E) of coupled polycrystalline films of antiferromagnetic CoO and ferromagnetic Co was significantly enhanced by the systematic substitution of nonmagnetic Mg for Co in CoO. Samples in which either Co or Co(1-x)Mg(x)O were deposited first were investigated at temperatures from 10 to 300 K. With Co(1-x)Mg(x)O on the bottom, the increased interfacial uncompensated spin density of the single antiferromagnetic domain Co(1x)Mg(x)O crystallites produced the enhanced H(E). With Co on the bottom, a thin interfacial oxide layer was primarily responsible for the strongly increased H(E).

The structure of Co/Pd multilayers has a strong effect on the localized anisotropy distribution within a film and on the resulting switching properties of nanostructures fabricated from identical material. By varying the underlying seed layer in sputtered films, the microstructure can be controlled from being highly ͑111͒ textured to having a random grain orientation. We find a strong correlation between the lateral homogeneity of grain orientations and the localized anisotropy distribution in the material. X-ray diffraction and reflectivity indicate that the interface is better defined and more uniform in the textured case, consistent with the presence of a strong interfacelike anisotropy.

Co 40 Fe 40 B 20 / MgO single and double barrier magnetic tunnel junctions ͑MTJs͒ were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co 40 Fe 40 B 20 ferromagnetic electrodes. Large tunnel magnetoresistance ͑TMR͒ ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co 40 Fe 40 B 20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350°C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300°C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.

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