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Dissipation is a general feature of non-Hermitian systems. But rather than being an unavoidable nuisance, non-Hermiticity can be precisely controlled and hence used for sophisticated applications, such as optical sensors with enhanced sensitivity. In our work, we implement a non-Hermitian photonic mesh lattice by tailoring the anisotropy of the nearest-neighbor coupling. The appearance of an interface results in a complete collapse of the entire eigenmode spectrum, leading to an exponential localization of all modes at the interface. As a consequence, any light field within the lattice travels toward this interface, irrespective of its shape and input position. On the basis of this topological phenomenon, called the “non-Hermitian skin effect,” we demonstrate a highly efficient funnel for light.

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We propose an electric circuit array with topologically protected uni-directional voltage modes at its boundary. Instead of external bias fields or floquet engineering, we employ negative impedance converters with current inversion (INICs) to accomplish a non-reciprocal, time-reversal symmetry broken electronic network we call topolectrical Chern circuit (TCC). The TCC features an admittance bulk gap fully tunable via the resistors used in the INICs, along with a chiral voltage boundary mode reminiscent of the Berry flux monopole present in the admittance band structure. The active circuit elements in the TCC can be calibrated to compensate for dissipative loss.

Topological quantum matter is characterized by non-trivial global invariants of the bulk which induce gapless electronic states at its boundaries. A case in point are two-dimensional topological insulators (2D-TI) which host one-dimensional (1D) conducting helical edge states protected by time-reversal symmetry (TRS) against singleparticle backscattering (SPB). However, as twoparticle scattering is not forbidden by TRS [1], the existence of electronic interactions at the edge and their notoriously strong impact on 1D states may lead to an intriguing interplay between topology and electronic correlations. In particular, it is directly relevant to the question in which parameter regime the quantum spin Hall effect (QSHE) expected for 2D-TIs becomes obscured by these correlation effects that prevail at low temperatures [2]. Here we study the problem on bismuthene on SiC(0001) which has recently been synthesized and proposed to be a candidate material for a room-temperature QSHE [3]. By utilizing the accessibility of this monolayer-substrate system on atomic length scales by scanning tunneling microscopy/spectroscopy (STM/STS) we observe metallic edge channels which display 1D electronic correlation effects. Specifically, we prove the correspondence with a Tomonaga-Luttinger liquid (TLL), and, based on the observed universal scaling of the differential tunneling conductivity (dI/dV ), we derive a TLL parameter K reflecting intermediate electronic interaction strength in the edge states of bismuthene. This establishes the first spectroscopic identification of 1D electronic correlation effects in the topological edge states of a 2D-TI.The topological protection of the 1D metallic edge channels in 2D-TIs against elastic SPB by TRS [4,5] leads to quantized, i.e. dissipationless transport which is reflected in the QSHE. Moreover, the property of spin-momentum locking renders 2D-TIs promising candidate materials for applications in spintronics. To date, the QSHE has only been measured in three material systems that are all characterized by small bandgaps (E gap ≤ 55 meV) of which the quantum well (QW) structures of three-dimensional semiconductors, such as *