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We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4×50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of −9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers.

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Abstract-Efficient packaging of integrated photonic chips (PIC) on host substrates is essential to fully deploy their potential and to co-integrate electronic chips (EIC). A highperformance electro-optical printed circuit board (EOCB), which exhibits a combined electrical and optical interface, is proposed to serve as integration platform for PICs. This enables an assembly approach which combines two assembly steps, the optical and the electrical one, into one single step. Whereby, the two processes usually operate in quite different accuracy regimes.