We measured electron density and electron energy distribution function (EEDF) vertically through our reactor for a range of process conditions and for various gases. The EEDF of Ar plasma in the reactor could largely be described by the MaxwellBoltzmann distribution function, but it also contained a fraction (~10 -3 ) of electrons which were much faster (20-40 eV). At low pressures (6.8-11 µbar), the tail of fast electrons shifted to higher energies (E max ~ 50 eV) as we measured more towards the chuck. This tail of fast electrons could be shifted to lower energies (E max ~ 30 eV) when we increased pressure to 120 µbar or applied an external magnetic field of 9.5 µT. Addition of small amounts of N 2 (1-10%) or N 2 O (5%) to Ar plasma lowered the total density of slow electrons (approx. by a factor of two) but did not change the shape of the fast-electron tail of the EEDF. The ionization degree of Ar-plasma increased from 2.5·10 -4 to 5·10 -4 when an external magnetic field of 9.5 µT was applied. Motivation

In this work, amorphous silicon films with preformed a-Si lines were crystallized using a diode pumped solid state green laser irradiating at 532 nm. The possibility of controllable formation of grain boundaries was investigated. The crystallization processes in the rapidly melted silicon films were discussed. The influence of the crystallization parameters (i.e., energy density, scan velocity, etc.) and structure type (i.e., with and without preformed lines) on properties of the crystallized films was studied. The laser treatment with an energy density of 1.00 J/cm2 at a laser pulse overlapping of 90% provided the optimal crystallization process with predefined grain boundary location. X-ray diffraction (XRD), SEM and AFM microscopy have been used to characterize the crystallized silicon films.

This paper reports on the fabrication, simulation and characterization of post processing compatible poly GeSi MEM resonators. The resonators are fabricated, following a two masks process flow, using 1.5 µm thick low stress, highly conductive insitu boron doped LPCVD poly Ge 0.7 Si 0.3 structural layers. All the process steps are kept below 450 °C to potentially avoid CMOS degradation, a prime concern for post processing compatible MEMS. A narrow gap of ~40 nm is achieved using a sacrificial gap oxide layer between the vibrating structure and the electrodes. The GeSi resonators, square plate and circular disk, are excited in their respective Lamé and Wine glass modes exhibiting the resonance peaks at 47.9 MHz and 72.77 MHz, respectively, with the quality factor around 200,000 in air, the highest reported till date for post processing compatible capacitively transduced resonators.Index Terms-Poly GeSi, post-processing, quality factor, lamé mode, motional resistance, microelectromechanical resonator.I.

This paper reports the direct immobilization of deoxyribonucleic acid (DNA) sequences of Herpes simplex virus (5'-AT CAC CGA CCC GGA GAG GGA C-3') on the surface of DNA sensor by using the cyclic voltammetric method with the presence of pyrrole. The potential was scanned from -0.7 volt to + 0.6 volt, the scanning rate was at 100 mV/s....This kind of DNA sensor was developed to detect Herpes virus DNA in samples. The FTIR was applied to verify specific binding of DNA sequence and conducting polymer, the morphology of conducting polymer doped with DNA strands was investigated by using a field emission scanning electron microscope (FE-SEM). The results showed that output signal given by coimmobilized DNA/PPy membrane sensor was better than that given by APTS immobilized membrane sensors. The sensor can detect as low as 2 nM of DNA target in real samples.