Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.

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PACS 45.50.-j -Dynamics and kinematics of a particle and a system of particles PACS 45.05.+x -General theory of classical mechanics of discrete systems PACS 03.65.Vf -Phases: geometric; dynamic, topological Abstract -Hamiltonian monodromy -a topological property of the bundle of regular tori of a static Hamiltonian system which obstructs the existence of global action-angle variables-occurs in a number of integrable dynamical systems. Using as an example a simple integrable system of a particle in a circular box with quadratic potential barrier, we describe a time-dependent process which shows that monodromy in the static system leads to interesting dynamical effects.

A wet etching method for GaN and Al x Ga 1−x N, based on aqueous solutions of KOH, is presented. A detailed analysis of the etching rate dependence with temperature and concentration is described. This etching has been used for the fabrication of high optical quality pyramidal nanostructures in wurtzite N-face GaN grown on AlN-buffered Si(111) substrates by molecular beam epitaxy. These nanostructures have been studied by high-resolution transmission and scanning electron microscopy and their optical quality has been analysed by low-temperature photoluminescence (PL) measurements. The pyramids are parallel to the basal plane and limited by {11 21} planes and its presence improves the overall PL response of the sample. The relationship between the polarity of GaN and the characteristics of the AlN buffer has also been analysed.

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