This paper presents the effects of sublimation temperature of C60 fullerene on the photovoltaic properties of amorphous carbon (a-C) films synthesized by remote plasma cracking. Here, we show that the deposition rate increases rapidly,Raman peak intensity corresponding to disordered fullerene becomes strong and the optical band gap increases with increasing the sublimation temperature. The photovoltaic devices with structure of Al/C60/a-C/ITO glass are fabricated with different sublimation temperatures and therelationship between the photovoltaic properties and the material properties of a-C films are discussed. It is shown that the improvementof power conversion efficiency is explained by low component of disorderedC60in amorphous carbon at lower sublimation temperature.