The growth characteristics of silicon oxide film deposited by atmospheric pressure chemical vapor deposition using tetraethylorthosilicate and ozone were studied focusing on substrate dependence. We found that Si-OH and Si-O-C7H5 bonds on substrates act as tetraethylorthosilicate adsorption sites, and adsorption site density drastically affects film growth characteristics. Films show a rough surface and flowlike step coverage on substrates with low-density adsorption sites. On substrates with high-density adsorption sites, however, films show a smooth surface and conformal step coverage. Tetraethylorthosilicate adsorption sites on the substrate surface must be controlled to obtain the desired film growth characteristics. InfroductionSilicon oxide (Si02) film deposited by atmospheric pressure chemical vapor deposition (APCVD) using tetraethoxysilane [Si(0C9H5)4, TEOS] and ozone (03) (hereafter called 03-TEOS film) has been widely studied as an inter-

Gamma‐ray irradiation into vertical type n‐channel hexagonal (4H)‐silicon carbide (SiC) metal‐oxide‐semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a constant positive gate bias showed a large negative shift, and the shift slightly recovered above 100 kGy. For MOSFETs with non‐ and a negative constant biases, no significant change in threshold voltage, Vth, was observed up to 400 kGy. By changing the gate bias from positive bias to either negative or non‐bias, the Vth significantly recovered from the large negative voltage shift induced by 50 kGy irradiation with positive gate bias after only 10 kGy irradiation with either negative or zero bias. It indicates that the positive charges generated in the gate oxide near the oxide–SiC interface due to irradiation were removed or recombined instantly by the irradiation under zero or negative biases.

Articles you may be interested inCharacterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal-insulator-metal capacitor dielectric for GaAs HBT technology J. Vac. Sci. Technol. A 31, 01A134 (2013); 10.1116/1.4769207 Nanochemistry, nanostructure, and electrical properties of Ta 2 O 5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition Plasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane J. Vac. Sci. Technol. A 24, 291 (2006); 10.1116/1.2171706Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond One important issue for integrating atomic layer deposition ͑ALD͒ TaN on a template type porous low-k film is penetration of Ta precursor into the pores. Deposition of a thin film on a patterned sidewall by plasma enhanced chemical vapor deposition ͑PECVD͒ is a candidate for pore sealing. We have examined PECVD-SiCH from tetramethylsilane ͓Si͑CH 3 ͒ 4 :4MS͔ as a pore sealant and compared it to PECVD-SiOC from 4MS/ CO 2 and SiO 2 from tetraethoxysilane ͓Si͑OC 2 H 5 ͒ 4 : TEOS͔. ALD-TaN had an incubation time on a blanket SiCH, while it did not on a SiCH patterned wafer. The SiCH had the lowest deposition rate and the highest step coverage which enabled deposition of an ultrathin pore-sealing film as thin as 2 nm. Damascene Cu interconnects fabricated by using ALD-TaN barrier metal and the ultrathin SiCH pore-seal demonstrated good electrical characteristics which successfully presented the increase in leakage current due to metal penetration, and it minimized the increase in line resistance by keeping the sealing layer thin.

Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) was investigated up to 5.8 MGy. The drain current–gate voltage curves for the MOSFETs shifted from positive to negative voltages due to irradiation. However, the drain current–gate voltage curve shifts for the MOSFETs irradiated at 150 °C was smaller than those irradiated at room temperature. Thus, the shift of threshold voltage due to irradiation was suppressed by irradiation at 150 °C. No significant change or slight decrease in subthreshold voltage swing for the MOSFETs irradiated at 150 °C was observed. The value of channel mobility increased due to irradiation, and the increase was enhanced by irradiation at 150 °C comparing to irradiation at RT.

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