Influence of Fe contamination in CZ-grown silicon single crystal on oxidation-induced stacking fault (OSF) generation density, carrier recombination and generation lifetimes, and gate oxide integrity (GOI) yield characteristics was experimentally investigated. Two Fe-doped silicon ingots were grown and tested. Concentration of Fe-B ([Fe-B]) in these silicon ingots measured by deep level transient spectroscopy (DLTS) was about 5×1011 cm-3 and 5×1012 cm-3, respectively. OSF density generated by three-step annealing showed dependence on [Fe-B]. Carrier recombination lifetime (τ r) showed good correlation with [Fe-B], and a quantitative relationship was established. OSF density after one-step annealing, carrier generation lifetime (τ g) and GOI yield were not so dependent on [Fe-B].

The structure of a 50-nm-thick TiO2 film grown on MgO(001) substrate maintained at 630 °C was studied by x-ray diffraction. Each film was fabricated by varying both the deposition rate of Ti atoms, which are produced by Ar-ion beam sputtering onto a Ti target, and the partial pressure of O2 gas (PO2). When Ti atoms are supplied at a rate of 0.1 nm min−1(4.0×1014 cm−2 min−1) at PO2=1.1×10−2 Pa, the TiO2 film exhibited the anatase structure whose (200) plane was parallel to the MgO(001). The TiO2 film with the rutile structure whose (110) plane was parallel to the MgO(001) was grown at the same deposition rate and PO2=3.1×10−3 Pa. Evidence demonstrating that the structure of TiO2 film is controlled only when Ti atoms and O2 molecules are supplied simultaneously is presented.

We introduce a local measure of the quality of a trial wave function: the local variance. Using this tool we examine the pair function often adopted to construct wave functions for small helium clusters and apply it to a wave function for 4 He2 using the TTY interaction potential. Our analysis shows that this commonly employed functional form should be improved in the short-range region. We introduce a new model based on the short-range behaviour of the exact ground-state solution of a Morse potential. The resulting compact trial wave function for 4 He2 recovers 98% of the exact binding energy with only six variational parameters.