This Letter focuses on the discovery of a transparent conducting oxide (TCO), anatase Ti1−xNbxO2 films with x=0.002–0.2. The resistivity of films with x⩾0.03 is 2–3×10−4Ωcm at room temperature. The carrier density of Ti1−xNbxO2 can be controlled in a range of 1×1019to2×1021cm−3. The internal transmittance for films with x⩽0.03 (40nm thickness) is about 97% in the visible light region. The transport and optical parameters are comparable to those of typical TCOs, such as In2−xSnxO3 and ZnO.

We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means of first-principles band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitals are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 1021 cm-3 and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and core-level photoemission measurements are consistent with prediction by the present band calculations.

We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5×10-4 Ω cm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.