z Japan Synchrotron Radiation Research Institute (SPring-8) Kouto, Hyogo 679-5198, JapanFluorine-containing indium tin oxide (F-ITO) sputtering targets were prepared using spark-plasma-sintering (SPS) process. The initial powder, which was prepared by reacting ITO with HF, was sintered to the 10 cm-disks with nearly 90% of the theoretical density by the SPS process. The resulting disks were consisted of ITO and InOF, and the fluorine content was about 4 at.%. Using the F-ITO disks as sputtering target, thin films were deposited on the glass substrates. The electrical conductivity and optical transmission of the deposited films were comparable to those of the conventional ITO films, while the surface roughness of the films was much improved. P. Gouma-contributing editor
In order to form a polarizing alumina film by lowtemperature anodization, the anodization voltage and concentration of sulfuric acid were optimized. It was found that when pulsed anodization was used instead of a constant anodization voltage, the substrate was efficiently cooled and the quality of the anodized film was improved. The polarizing alumina film was used as a bulk polarizer.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.